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Sub-THz imaging cameras
New physical principle employed
Operates at frequencies (0.05 - 0.7 THz), where most common materials are transparent
Different models are available: 256 pixels; 1024 pixels; 4096 pixels - to accomodate any budget
USB feeding and programming

1 year warranty
The detectors are fabricated from GaAs high-mobility heterostructure in the standard semiconductor cycle using conventional optical lithography. The imaging sensor is manufactured on a single wafer. That process ensures high homogeneity and reproducibility of the plasmonic detector parameters (pixel-to-pixel deviation responsivity is within 20-percent range). Each unit detector proved to have room-temperature responsivity up to 50 kV/W with read-out circuitry and noise equivalent power 1 nW/Hz^0.5 in the frequency range 10 GHz - 1 THz. The detection mechanism is based on transformation of incident THz radiation into two-dimensional electron system (2DES) plasma oscillation. Plasma wave is then rectified on the inhomogeneity of 2DES electron density in the defect region.
RTera-256 Model   256 pixels (16 x 16 array)  1.5 x 1.5 mm pixel size  50 kV/W responsivity with NEP=1 nW/Hz^0.5  10 cm x 10 cm x 5.5 cm device size
RTera-256 Model
RTera-1024 Model   1024 pixels (32 x 32 array)  1.5 x 1.5 mm pixel size  50 kV/W responsivity with NEP=1 nW/Hz^0.5  10 cm x 10 cm x 5.5 cm device size
RTera-1024 Model
RTera-4096 Model   4096 pixels (64 x 64 array)  1.5 x 1.5 mm pixel size  50 kV/W responsivity with NEP=1 nW/Hz^0.5  20 cm x 20 cm x 10 cm device size
RTera-4096 Model
TeraHertz Products
IMPATT sub-THz generators
IMG_2123 _Sub-THz Generator (NEW)
80 - 120 GHz frequency range
Typical output power 10 mW
Low cost and compact
1 year warranty
Customer focused solutions
Add-ons with enhancements
An IMPATT diode (IMPact ionization Avalanche Transit-Time) is a high-power diode used in microwave electronics and sub-THz devices. They operate at frequency range 3 - 400 GHz. Main advantage is their high-power capability and small size. The IMPATT diode operates over a narrow frequency band, and diode internal dimensions must correlate with the desired operating frequency.
TeraSense series of IMPATT diodes are silicon double drift diodes with a 0.6 um transit region, mounted on copper heat sink. The layers in double-drift diodes are: a heavily doped (p+)-region, a moderately doped pregion, a moderately doped n-region, and a heavily doped (n+)-region. The (p+)- and (n+)- regions allow ohmic electrical contacts to be made to the external circuit. The device relies on negative resistance to generate and sustain an oscillation.
IMPATT Diode Specifications
80 - 120 GHz frequency range.  Available minimum output power 10 mW.  Typical linewidth can be narrowed down to 1 MHz.  Operating voltage range 15-16 V.  Operating current 110 - 120 mA.  Input power 2W (stable current source required, TeraSense-produced source is highly recommended)  TTL Modulation option (1us rise/fall time) - available as add-on option  Rigidly attached conical horn - available as add-on option  High power option (>50 mW output rfpower) - available as add-on option  1 year warranty period.
Ultrafast sub-Terahertz detectors
Ultrafast Detector_New
Ultrafast Detectro_NEW3
Response time: 150 ps
Spectral Range: 50 GHz - 1.0 THz

Responsivity (typical): 1 V/W
Noise Equivalent Power : 1 nW/vHz
Sensitive area: 3 x 3.5 mm
No power supply needed
Compact size: 23 x 29 x 6.5 mm
Detailed description
Passive-type ultra-fast detector for sub-THz radiation range.
Capture (mixed signal)-1
This product is an ultimately user-friendly plug & play device. All you need to put it to use is an oscilloscope (or any other type of voltage detector), which is to be pluged to a coaxial SMA type output connector and then exposed to a THz or sub-THZ radiation under investigation. TeraSense® detector response time was measured using mixing method at local oscillator frequency of 97 GHz. Photoresponse of the detector measured as a function of differential frequency ?f is shown in Figure to the left. Photoresponse cut-off differential frequency f0 = 3.75 GHz, which corresponds to response time of 300 ps.
TeraSense® detectors are sensitive in a wide frequency range. However, due to radiation interference within the bulk of detector’s crystal, its responsivity consists of multiple peak structures (see example in Figure to the right). Most importantly, our specialists - having full control of the technology- can tune up positions of the peaks in responsivity curve at manufacturing stage.
This way, being offered such attractive and free customization opportunity, our clients can choose and order specific frequencies or frequency ranges they need, when making their purchase request. Our ultrafast high-sensitive sub-THz detectors are meant for exploring fast-changing and transient sub-THz signals and impulses. Terasense detectors are actually expediting the advent of ultra-high-speed wireless telecommunication networks that is about to happen in the nearest future. Terasense ultrafast detectors are also an ultimate tool for characterization, calibration and tuning of impulse sub-THz sources.
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